? semiconductor components industries, llc, 2001 january, 2001 rev. 0 1 publication order number: ntd20n03l27/d ntd20n03l27 power mosfet 20 amps, 30 volts nchannel dpak this logic level vertical power mosfet is a general purpose part that provides the abest of designo available today in a low cost power package. avalanche energy issues make this part an ideal design in. the draintosource diode has a ideal fast but soft recovery. features ? ultralow r ds(on) , single base, advanced technology ? spice parameters available ? diode is characterized for use in bridge circuits ? i dss and v ds(on) specified at elevated temperatures ? high avalanche energy specified ? esd jedac rated hbm class 1, mm class a, cdm class 0 typical applications ? power supplies ? inductive loads ? pwm motor controls ? replaces mtd20n03l in many applications maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 30 vdc draintogate voltage (r gs = 1.0 m w ) v dgr 30 vdc gatetosource voltage continuous nonrepetitive (t p 10 ms) v gs v gs 20 24 vdc drain current continuous @ t a = 25 c continuous @ t a = 100 c single pulse (t p 10 m s) i d i d i dm 20 16 60 adc apk total power dissipation @ t a = 25 c derate above 25 c total power dissipation @ t c = 25 c (note 1.) p d 74 0.6 1.75 watts w/ c w operating and storage temperature range t j , t stg 55 to 150 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 30 vdc, v gs = 5 vdc, l = 1.0 mh, i l(pk) = 24 a, v ds = 34 vdc) e as 288 mj thermal resistance junctiontocase junctiontoambient junctiontoambient (note 1.) r q jc r q ja r q ja 1.67 100 71.4 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using the minimum recommended pad size and repetitive rating; pulse width limited by maximum junction temperature. 20 amperes 30 volts r ds(on) = 27 m w device package shipping ordering information ntd20n03l27 dpak 75 units/rail case 369a dpak style 2 pin assignment http://onsemi.com nchannel d s g ntd20n03l271 dpak 75 units/rail marking diagram 20n3l = device code y = year ww = work week yww 20n3l 1 gate 3 source 2 drain ntd20n03l27t4 dpak 2500 tape & reel 4 drain 1 2 3 4
ntd20n03l27 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (note 2.) (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 30 43 vdc mv/ c zero gate voltage drain current (v ds = 30 vdc, v gs = 0 vdc) (v ds = 30 vdc, v gs = 0 vdc, t j =150 c) i dss 10 100 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics (note 2.) gate threshold voltage (note 2.) (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 1.0 1.6 5.0 2.0 vdc mv/ c static draintosource onresistance (note 2.) (v gs = 4.0 vdc, i d = 10 adc) (v gs = 5.0 vdc, i d = 10 adc) r ds(on) 28 23 31 27 m w static draintosource onresistance (note 2.) (v gs = 5.0 vdc, i d = 20 adc) (v gs = 5.0 vdc, i d = 10 adc, t j = 150 c) v ds(on) 0.48 0.40 0.54 vdc forward transconductance (note 2.) (v ds = 5.0 vdc, i d = 10 adc) g fs 21 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 1005 1260 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 271 420 transfer capacitance f = 1 . 0 mhz) c rss 87 112 switching characteristics (note 3.) turnon delay time t d(on) 17 25 ns rise time (v dd = 20 vdc, i d = 20 adc, v gs =50vdc t r 137 160 turnoff delay time v gs = 5.0 vdc, r g = 9.1 w ) (note 2.) t d(off) 38 45 fall time r g 9.1 w ) (note 2.) t f 31 40 gate charge (v 48 vd i 15 ad q t 13.8 18.9 nc (v ds = 48 vdc, i d = 15 adc, v gs = 10 vdc ) ( note 2. ) q 1 2.8 v gs = 10 vdc) (note 2 . ) q 2 6.6 sourcedrain diode characteristics forward onvoltage (i s = 20 adc, v gs = 0 vdc) (note 2.) (i s = 20 adc, v gs = 0 vdc, t j = 125 c) v sd 1.0 0.9 1.15 vdc reverse recovery time t rr 23 ns (i s =15 adc v gs = 0 vdc t a 13 (i s =15 adc, v gs = 0 vdc, dl s /dt = 100 a/ m s) (note 2.) t b 10 reverse recovery stored charge dl s /dt = 100 a/ m s) (note 2 . ) q rr 0.017 m c 2. pulse test: pulse width 300 m s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperature.
ntd20n03l27 http://onsemi.com 3 1.6 1.4 1 1.2 0.8 0.6 10 1 100 1000 24 16 28 12 20 0 40 0.015 0 30 1 15 0.4 0.2 i d , drain current (amps) 0 v gs , gatetosource voltage (v) figure 1. onregion characteristics figure 2. transfer characteristics i d , drain current (amps) 2 0.04 0.035 0.03 0.025 22 15 12 0.02 0.015 0.01 0.005 0 5252832 figure 3. onresistance vs. drain current and temperature i d , drain current (amps) figure 4. onresistance vs. drain current and gate voltage i d , drain current (amps) figure 5. onresistance variation with temperature t j , junction temperature ( c) figure 6. draintosource leakage current vs. voltage v ds , draintosource voltage (v) r ds(on) , draintosource resistance (normalized) i dss , leakage (na) 40 50 75 50 0 25 100 150 0.5 1.5 5 02832 24 20 36 16 40 0.02 0.01 0.025 0.03 01215 9 618 330 v ds , draintosource voltage (v) 5 10 20 25 35 1.4 2 4 0.6 0.8 1.2 1.6 1.8 1 2 2.5 3 3.5 4 4.5 818 3538 r ds(on) , draintosource resistance ( w ) r ds(on) , draintosource resistance ( w ) 4812 125 25 21 24 27 v gs = 10 v v gs = 8 v v gs = 6 v v gs = 5 v v gs = 4.5 v v gs = 4 v v gs = 3.5 v v gs = 3 v v gs = 2.5 v 8 32 36 t j = 25 c t j = 100 c t j = 55 c v ds > = 10 v v gs = 5 v t j = 25 c t j = 100 c t j = 55 c v gs = 5 v v gs = 10 v t j = 25 c i d = 10 a v gs = 5 v t j = 100 c t j = 125 c v gs = 0 v t j = 25 c
ntd20n03l27 http://onsemi.com 4 4 350 300 200 250 150 100 0 8 4 10 2 6 0 12 14 10 1500 8 2 4 c, capacitance (pf) 0 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gatetosource and draintosource voltage vs. total charge v gs , gatetosource voltage (v) 1 1000 100 10 10 1 100 figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( w ) figure 10. diode forward voltage vs. current v sd , sourcetodrain voltage (v) i s , source current (amps) t, time (ns) figure 11. maximum avalanche energy vs. starting junction temperature t j , starting junction temperature ( c) e as , single pulse draintosource avalanche energy (mj) 2500 25 125 100 75 50 150 06 14 0.0 0.4 0.5 0.3 0.2 0.6 0.1 1.0 10 16 8 12 0 18 20 gatetosource or draintosource voltage (v) 500 1000 200 14 25 8 6 2 0 6 10 12 16 18 20 23 2 4 8 10 12 6 4 2 0.7 0.8 0.9 50 v gs v ds c iss c oss c rss q1 q2 q i d = 20 a t j = 25 c v gs v ds = 20 v i d = 20 a v gs = 5.0 v t j = 25 c t r t f t d(off) t d(on) v gs = 0 v t j = 25 c i d = 24 a
ntd20n03l27 http://onsemi.com 5 package dimensions style 2: pin 1. gate 2. drain 3. source 4. drain d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 dpak case 369a13 issue aa
ntd20n03l27 http://onsemi.com 6 notes
ntd20n03l27 http://onsemi.com 7 notes
ntd20n03l27 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntd20n03l27/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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